Fortune Semiconductor FS8205A
Dual N-Channel Enhancement Mode Power MOSFET
| Part No. | FS8205A |
|---|---|
| Datasheet | FS8205A Download |
| Manufacturer |  Fortune Semiconductor |
| Description | Dual N-Channel Enhancement Mode Power MOSFET |
| Buy | Stock & Price |
FEATURES
1.1 Low on-resistance 1.1.1 RDS(ON) = 28 mΩ MAX. (VGS = 4.5V, ID = 4A) 1.1.2 RDS(ON) = 37 mΩ MAX. (VGS = 2.5V, ID = 3A) 2.APPLICATIONS
● Li-ion battery management applications 3. Ordering Information Product NumberDESCRIPTION
FS8205A TSSOP8 package version Package Type TSSOP-8 Quantity/Reel 3,000 4. Pin Assignment For RefPerrFoepOnecRrteTieUOsnNlEy' 5.ABSOLUTE MAXIMUM RATINGS
Symbol VDS VGS ID @TA = 25℃ ID @TA = 70℃ IDM PD @TA = 25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range 6. Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient3 Rating 20 ±12 6 5 25 1 0.008 -55 to 150 -55 to 150 Units V V A A A W W/℃ ℃ ℃ Value Max. 125 Unit ℃/W 7.ELECTRICAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
@Tj = 25℃ ( unless otherwise specified ) Symbol Parameter Test Conditions...
