FS8205A Datasheet and Specifications PDF

Product Summary V(BR)DSS RDS(on)MAX ID 25mΩ@4.5V 20V 6A 32mΩ@2.5V FS8205A N-Channel Enhancement Mode MOSFET Feature Advanced trench process technology High density cell design for ultra low o.

Advanced trench process technology High density cell design for ultra low on-resistance Application Battery protection Switching application Package Circuit diagram SOT-23-6L Marking G1 D1/D2 G2 8205A S1 D1/D2 S2 Page 1 Ver2.1 FS8205A N-Channel Enhancement Mode MOSFET Absol.

FS8205A TSSOP8 package version Package Type TSSOP-8 Quantity/Reel 3,000 4. Pin Assignment For RefPerrFoepOnecRrteTieUOsnNlEy' 5. Absolute Maximum Ratings Symbol VDS VGS ID @TA = 25℃ ID @TA = 7.

1.1 Low on-resistance 1.1.1 RDS(ON) = 28 mΩ MAX. (VGS = 4.5V, ID = 4A) 1.1.2 RDS(ON) = 37 mΩ MAX. (VGS = 2.5V, ID = 3A) 2. Applications
* Li-ion battery management applications 3. Ordering Information Product Number Description FS8205A TSSOP8 package version Package Type TSSOP-8 Quantity/Reel.

Top View D1 S1 2 S1 3 G1 4 8D 7 S2 6 S2 5 G2 TSSOP-8 Applications z Portable Equipment and Battery Powered Systems. N Channel MOSFET 1/5 FS8205A Absolute Maximum Ratings (TA=25°C Unless Other.

z 20V/6A, RDS(ON)<25mΩ @ VGS=4.5V RDS(ON) <34mΩ @ VGS=2.5V z Super High Dense Cell Design z Reliable and Rugged z Lead Free Available (RoHS Compliant) Pin Description Top View D1 S1 2 S1 3 G1 4 8D 7 S2 6 S2 5 G2 TSSOP-8 Applications z Portable Equipment and Battery Powered Systems. N Channel .