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MD7IC21100GNR1 Datasheet Rf Ldmos Wideband Integrated Power Amplifiers

Manufacturer: Freescale Semiconductor (now NXP Semiconductors)

Overview: Freescale Semiconductor Technical Data Document Number: MD7IC21100N Rev. 0, 10/2008 .. RF LDMOS Wideband Integrated Power Amplifiers The MD7IC21100N wideband integrated circuit is designed with on - chip matching that makes it usable from 2110 to 2170 MHz. This multi - stage structure is rated for 24 to 32 Volt operation and covers all typical cellular base station modulation formats including TD - SCDMA. • Typical Single- Carrier W - CDMA Performance: VDD = 28 Volts, IDQ1A = IDQ1B = 190 mA, IDQ2A = IDQ2B = 925 mA, Pout = 32 Watts Avg., f = 2167.5 MHz, 3GPP Test Model 1, 64 DPCH with 50% Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Power Gain — 28.5 dB Power Added Efficiency — 30% Device Output Signal PAR — 6.1 dB @ 0.01% Probability on CCDF ACPR @ 5 MHz Offset — - 38 dBc in 3.84 MHz Channel Bandwidth • Capable of Handling 5:1 VSWR, @ 32 Vdc, 2140 MHz, Pout = 110 Watts CW (3 dB Input Overdrive from Rated Pout) • Stable into a 5:1 VSWR. All Spurs Below - 60 dBc @ 1 mW to 100 Watts CW Pout.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Key Features

  • 100% PAR Tested for Guaranteed Output Power Capability.
  • Characterized with Series Equivalent Large - Signal Impedance Parameters and Common Source S-Parameters.
  • On - Chip Matching (50 Ohm Input, on a per side basis, DC Blocked).
  • Internally Matched for Ease of Use.
  • Integrated Quiescent Current Temperature Compensation with Enable/ Disable Function (1).
  • Integrated ESD Protection.
  • 225°C Capable Plastic Package.
  • RoHS Compliant.

More Datasheets from Freescale Semiconductor (now NXP Semiconductors)

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