MD7IC21100NbR1 Description
Freescale Semiconductor Technical Data Document Number: RF LDMOS Wideband Integrated Power Amplifiers The MD7IC21100N wideband integrated circuit is designed with on - chip matching that makes it usable from 2110 to 2170 MHz. This multi - stage structure is rated for 24 to 32 Volt operation and covers all typical cellular base station modulation formats including TD - SCDMA.
MD7IC21100NbR1 Key Features
- 100% PAR Tested for Guaranteed Output Power Capability
- Characterized with Series Equivalent Large
- Signal Impedance Parameters and mon Source S-Parameters
- Chip Matching (50 Ohm Input, on a per side basis, DC Blocked)
- Internally Matched for Ease of Use
- Integrated Quiescent Current Temperature pensation with Enable/ Disable Function (1)
- Integrated ESD Protection
- 225°C Capable Plastic Package
- RoHS pliant
- In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel