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MD7IC21100NbR1 - RF LDMOS Wideband Integrated Power Amplifiers

Download the MD7IC21100NbR1 datasheet PDF. This datasheet also covers the MD7IC21100NR1 variant, as both devices belong to the same rf ldmos wideband integrated power amplifiers family and are provided as variant models within a single manufacturer datasheet.

General Description

10 μF, 50 V Chip Capacitors 5.1 pF Chip Capacitors 10 pF Chip Capacitor 1.2 pF Chip Capacitors 0.5 pF Chip Capacitor 0.1 μF, 100 V Chip Capacitors 1 μF, 100 V Chip Capacitors 4.7 KΩ, 1/4 W Chip Resistors 2 Ω,1/2 W Chip Resistors Part Number GRM55DR61H106KA88B ATC100B5R1CT500XT ATC100B100JT500XT ATC1

Key Features

  • 100% PAR Tested for Guaranteed Output Power Capability.
  • Characterized with Series Equivalent Large - Signal Impedance Parameters and Common Source S-Parameters.
  • On - Chip Matching (50 Ohm Input, on a per side basis, DC Blocked).
  • Internally Matched for Ease of Use.
  • Integrated Quiescent Current Temperature Compensation with Enable/ Disable Function (1).
  • Integrated ESD Protection.
  • 225°C Capable Plastic Package.
  • RoHS Compliant.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MD7IC21100NR1_FreescaleSemiconductor.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Freescale Semiconductor (now NXP Semiconductors)

Part Number Description
MD7IC21100NR1 RF LDMOS Wideband Integrated Power Amplifiers
MD7IC21100GNR1 RF LDMOS Wideband Integrated Power Amplifiers
MD7IC2050GNR1 RF LDMOS Wideband Integrated Power Amplifiers
MD7IC2050NBR1 RF LDMOS Wideband Integrated Power Amplifiers
MD7IC2050NR1 RF LDMOS Wideband Integrated Power Amplifiers

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Freescale Semiconductor Technical Data Document Number: MD7IC21100N Rev. 0, 10/2008 www.DataSheet4U.com RF LDMOS Wideband Integrated Power Amplifiers The MD7IC21100N wideband integrated circuit is designed with on - chip matching that makes it usable from 2110 to 2170 MHz. This multi - stage structure is rated for 24 to 32 Volt operation and covers all typical cellular base station modulation formats including TD - SCDMA. • Typical Single- Carrier W - CDMA Performance: VDD = 28 Volts, IDQ1A = IDQ1B = 190 mA, IDQ2A = IDQ2B = 925 mA, Pout = 32 Watts Avg., f = 2167.5 MHz, 3GPP Test Model 1, 64 DPCH with 50% Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Power Gain — 28.5 dB Power Added Efficiency — 30% Device Output Signal PAR — 6.1 dB @ 0.