MRF7S18125BHSR3

MRF7S18125BHSR3 is RF Power Field Effect Transistors manufactured by Freescale Semiconductor.

MRF7S18125BHSR3 Datasheet

Part number	MRF7S18125BHSR3
Download	MRF7S18125BHSR3 Datasheet (PDF)
File Size	511.70 KB
Manufacturer	Freescale Semiconductor
Description	RF Power Field Effect Transistors

Related Freescale Semiconductor Datasheets

Part Number	Description
MRF7S18125BHR3	RF Power Field Effect Transistors
MRF7S18125AHR3	RF Power Field Effect Transistors
MRF7S18125AHSR3	RF Power Field Effect Transistors
MRF7S15100HR3	RF Power Field Effect Transistors
MRF7S15100HSR3	RF Power Field Effect Transistors

MRF7S18125BHSR3 Distributor

MRF7S18125BHSR3 Description

Freescale Semiconductor Technical Data .. 0, 11/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Can be used in Class AB and Class C for all typical cellular base station modulations.

MRF7S18125BHSR3 Key Features

Characterized with Series Equivalent Large
Signal Impedance Parameters
Internally Matched for Ease of Use
Integrated ESD Protection
RoHS pliant
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel
CHANNEL RF POWER MOSFETs
06, STYLE 1 NI
780 MRF7S18125BHR3
06, STYLE 1 NI

More datasheets by Freescale Semiconductor

See all Freescale Semiconductor parts