MRF7S18125BHSR3 Datasheet PDF (RF Power Field Effect Transistors) | Download Freescale Semiconductor MRF7S18125BHSR3

MRF7S18125BHSR3 - RF Power Field Effect Transistors

This page provides the datasheet information for the MRF7S18125BHSR3, a member of the MRF7S18125BHR3 RF Power Field Effect Transistors family.

Description

1 μF, 50 V Chip Capacitor 4.7 μF, 50 V Chip Capacitors 220 μF, 63 V Electrolytic Chip Capacitor 6.8 pF Chip Capacitors 1 pF Chip Capacitors 0.2 pF Chip Capacitors 10 kΩ, 1/4 W Chip Resistors 10 Ω, 1/4 W Chip Resistor Part Number 12065G105AT2A GRM55ER71H475KA01L 2222 136 68221 ATC100B6R8BT500XT ATC10

Features

Characterized with Series Equivalent Large - Signal Impedance Parameters.
Internally Matched for Ease of Use.
Integrated ESD Protection.
RoHS Compliant.
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MRF7S18125BHR3 MRF7S18125BHSR3 1930- 1990 MHz, 125 W CW, 28 V GSM, GSM EDGE.

Datasheet Details

Part number	MRF7S18125BHSR3
Manufacturer	Freescale Semiconductor
File Size	511.70 KB
Description	RF Power Field Effect Transistors
Datasheet	MRF7S18125BHSR3 Datasheet
Additional preview pages of the MRF7S18125BHSR3 datasheet.

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Full PDF Text Transcription

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Freescale Semiconductor Technical Data www.DataSheet4U.com Document Number: MRF7S18125BH Rev. 0, 11/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Can be used in Class AB and Class C for all typical cellular base station modulations. GSM Application • Typical GSM Performance: VDD = 28 Volts, IDQ = 1100 mA, Pout = 125 Watts CW, f = 1930 MHz. Power Gain — 16.5 dB Drain Efficiency — 55% GSM EDGE Application • Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 1100 mA, Pout = 57 Watts Avg., Full Frequency Band (1930 - 1990 MHz).

Published: Jul 16, 2009 |