Datasheet Summary
Freescale Semiconductor Technical Data ..
Document Number: MRF7S18125BH Rev. 0, 11/2008
RF Power Field Effect Transistors
- Channel Enhancement
- Mode Lateral MOSFETs
Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Can be used in Class AB and Class C for all typical cellular base station modulations. GSM Application
- Typical GSM Performance: VDD = 28 Volts, IDQ = 1100 mA, Pout = 125 Watts CW, f = 1930 MHz. Power Gain
- 16.5 dB Drain Efficiency
- 55% GSM EDGE Application
- Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 1100 mA, Pout = 57 Watts Avg., Full Frequency Band (1930
- 1990 MHz). Power Gain
- 17 dB Drain...