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MRF7S19170HSR3 - RF Power Field Effect Transistors

This page provides the datasheet information for the MRF7S19170HSR3, a member of the MRF7S19170HR3 RF Power Field Effect Transistors family.

Description

1.8 pF Chip Capacitors 8.2 pF Chip Capacitors 100 pF Chip Capacitor 100 nF Chip Capacitor 10 μF Chip Capacitors 0.5 pF Chip Capacitor 1.5 pF Chip Capacitor 0.3 pF Chip Capacitor 0.8 pF Chip Capacitor 470 μF, 63 V Electrolytic Capacitor, Axial 10 kΩ, 1/4 W Chip Resistors 10 Ω, 1/4 W Chip Resistor Par

Features

  • 100% PAR Tested for Guaranteed Output Power Capability.
  • Characterized with Series Equivalent Large - Signal Impedance Parameters.
  • Internally Matched for Ease of Use.
  • Integrated ESD Protection.
  • Greater Negative Gate - Source Voltage Range for Improved Class C Operation.
  • Designed for Digital Predistortion Error Correction Systems.
  • RoHS Compliant.
  • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MRF7S19170HR3.

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Datasheet preview – MRF7S19170HSR3

Datasheet Details

Part number MRF7S19170HSR3
Manufacturer Freescale Semiconductor
File Size 446.58 KB
Description RF Power Field Effect Transistors
Datasheet download datasheet MRF7S19170HSR3 Datasheet
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Full PDF Text Transcription

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www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF7S19170H Rev. 0, 10/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for CDMA and multicarrier amplifier applications. To be used in Class AB and Class C for PCN - PCS/cellular radio and WLL applications. • Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1400 mA, Pout = 50 Watts Avg., Full Frequency Band, 3GPP Test Model 1, 64 DPCH with 50% Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Power Gain — 17.2 dB Drain Efficiency — 32% Device Output Signal PAR — 6.2 dB @ 0.
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