Datasheet Summary
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Freescale Semiconductor Technical Data
Document Number: MRF9582NT1 Rev. 1, 7/2006
Silicon Lateral FET, N
- Channel Enhancement
- Mode MOSFET
Designed for use in medium voltage, moderate power amplifiers such as portable analog and digital cellular radios and PC RF modems.
- Typical CW RF Performance @ 849 MHz: VDD = 12.5 Volts, IDQ = 300 mA, Pout = 38 dBm Power Gain
- 10.5 dB Drain Efficiency
- 55%
- Capable of Handling 10:1 VSWR, @ 12.5 Vdc, 849 MHz, 38 dBm
- RoHS pliant
- In Tape and Reel. T1 Suffix = 1,000 Units per 12 mm, 7 inch Reel
849 MHz, 38 dBm, 12.5 V HIGH FREQUENCY POWER TRANSISTOR LDMOS FET
CASE 449
- 02, STYLE 1 PLD
-...