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MRF9582NT1 - Silicon Lateral FET / N -Channel Enhancement-Mode MOSFET

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www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF9582NT1 Rev. 1, 7/2006 Silicon Lateral FET, N - Channel Enhancement - Mode MOSFET Designed for use in medium voltage, moderate power amplifiers such as portable analog and digital cellular radios and PC RF modems. • Typical CW RF Performance @ 849 MHz: VDD = 12.5 Volts, IDQ = 300 mA, Pout = 38 dBm Power Gain — 10.5 dB Drain Efficiency — 55% • Capable of Handling 10:1 VSWR, @ 12.5 Vdc, 849 MHz, 38 dBm • RoHS Compliant • In Tape and Reel. T1 Suffix = 1,000 Units per 12 mm, 7 inch Reel MRF9582NT1 849 MHz, 38 dBm, 12.5 V HIGH FREQUENCY POWER TRANSISTOR LDMOS FET 3 2 1 4 CASE 449 - 02, STYLE 1 PLD - 1 Table 1. Maximum Ratings Rating Drain - Source Voltage Drain - Gate Voltage (RGS = 1.