• Part: 2SK3680-01
  • Description: N-CHANNEL SILICON POWER MOSFET
  • Category: MOSFET
  • Manufacturer: Fuji Electric
  • Size: 139.18 KB
Download 2SK3680-01 Datasheet PDF
Fuji Electric
2SK3680-01
2SK3680-01 is N-CHANNEL SILICON POWER MOSFET manufactured by Fuji Electric.
Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristic Absolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Non-Repetitive Maximum avalanche current Repetitive or Maximum avalanche current Non-Repetitive Maximum avalanche energy Maximum Drain-Source d V/dt Peak diode recovery d V/dt Max. power dissipation Symbol Ratings V DS 500 VDSX 500 ID ±52 ID(puls] ±208 VGS ±30 IAS 52 IAR EAS d V DS/dt d V/dt PD 26 802.7 20 5 2.50 600 +150 -55 to +150 Unit V V A A V A Remarks VGS=-30V Operating and storage Tch temperature range Tstg - 1 See to Avalanche Current Graph - 2 See to Avalanche Energy Graph - 3 IF < = 150°C = -ID, -di/dt=50A/µs, VCC < = BVDSS, Tch < Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Tch=25°C - 1 A Tch< =150°C - 1 m J L=544µH VCC=50V - 2 k V/s VDS< = 500V k V/µs - 3 Ta=25°C W Tc=25°C °C °C Equivalent circuit schematic Drain(D) Gate(G) Source(S) Electrical characteristics (Tc =25°C unless otherwise specified) Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV V SD t rr Qrr Test Conditions VGS=0V ID= 250µA ID= 250µA VDS=VGS VDS=500V VGS=0V VDS=400V VGS=0V VGS=±30V VDS=0V ID=26A VGS=10V ID=26A VDS=25V VDS =25V VGS=0V f=1MHz VCC=300V ID=26A VGS=10V RGS=10 Ω VCC =250V ID=52A VGS=10V L=544µH Tch=25°C IF=52A VGS=0V Tch=25°C IF=52A VGS=0V -di/dt=100A/µs Tch=25°C Tch=25°C...