FGW75N65W
FGW75N65W is Discrete IGBT manufactured by Fuji Electric.
Features
Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc.)
Applications Uninterruptible power supply PV Power coditionner Inverter welding machine
Maximum Ratings and Characteristics
Absolute Maximum Ratings at Tj=25°C (unless otherwise specified)
Items Collector-Emitter Voltage Gate-Emitter Voltage Transient Gate-Emitter Voltage
DC Collector Current
Pulsed Collector Current
Symbols VCES
VGES
IC@25 IC@100 ICP
Turn-Off Safe Operating Area
- Max. Power Dissipation
Operating Junction Temperature Tj
Storage Temperature
Tstg
Characteristics 650 ±20 ±30 124 75 300
520 -40 ~ +175 -55 ~ +175
Unit
Remarks
V Tp<1µs
A TC=25°C
A TC=100°C
A Note
- 1
VCE≤650V Tj≤175°C
W TC=25°C
°C
°C
Note
- 1 : Pulse width limited by Tjmax.
Equivalent circuit Collector
Gate
Emitter
Electrical characteristics at Tj= 25°C (unless otherwise specified) Static Characteristics
Description...
