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FGW75N65W - Discrete IGBT

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Part number FGW75N65W
Manufacturer Fuji Electric
File Size 571.74 KB
Description Discrete IGBT
Datasheet download datasheet FGW75N65W Datasheet
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Description

Zero Gate Voltage Collector Current Symbol ICES Conditions VCE = 650V, VGE = 0V Tj=25°C Tj=175°C Gate-Emitter Leakage Current Gate-Emitter Threshold Voltage IGES VGE (th) VCE = 0V, VGE = ±20V VCE = 20V, IC = 75mA Tj=25°C Collector-Emitter Saturation Voltage VCE (sat) VGE = 15V, IC = 75A Tj=125°C Tj=175°C Input Capacitance Cies VCE=25V Output Capacitance Reverse Transfer Capacitance Coes VGE=0V Cres f=1MHz VCC = 520V Gate Charge Turn-On Delay Time Rise Time Turn-Off Delay Ti

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