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FGW75N65WE Datasheet Discrete IGBT

Manufacturer: Fuji Electric

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General Description

Zero Gate Voltage Collector Current Symbol ICES Conditions VCE = 650V, VGE = 0V Tj=25°C Tj=175°C Gate-Emitter Leakage Current IGES VCE = 0V, VGE = ±20V Gate-Emitter Threshold Voltage VGE (th) VCE = 20V, IC = 75mA Tj=25°C Collector-Emitter Saturation Voltage VCE (sat) VGE = 15V, IC = 75A Tj=125°C Tj=175°C Input Capacitance Cies VCE=25V Output Capacitance Coes VGE=0V Reverse Transfer Capacitance Cres f=1MHz VCC = 520V Gate Charge QG IC = 75A Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Energy Turn-Off Energy Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Energy Turn-Off Energy VGE = 15V td(on) tr td(off) tf Eon Eoff Tj = 25°C, VCC = 400V IC = 37.5A, VGE = 15V RG = 10Ω Energy loss inclu

Overview

FGW75N65WE http://www.fujielectric.com/products/semiconductor/ Discrete IGBT Discrete IGBT (High-Speed W series) 650V /.

Key Features

  • Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc. ).

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