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FGW75N65WE - Discrete IGBT

Description

Zero Gate Voltage Collector Current Symbol ICES Conditions VCE = 650V, VGE = 0V Tj=25°C Tj=175°C Gate-Emitter Leakage Current IGES VCE = 0V, VGE = ±20V Gate-Emitter Threshold Voltage VGE (th) VCE = 20V, IC = 75mA Tj=25°C Collector-Emitter Saturation Voltage VCE (sat) VGE = 15V, IC = 75

Features

  • Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc. ).

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Datasheet preview – FGW75N65WE

Datasheet Details

Part number FGW75N65WE
Manufacturer Fuji Electric
File Size 642.81 KB
Description Discrete IGBT
Datasheet download datasheet FGW75N65WE Datasheet
Additional preview pages of the FGW75N65WE datasheet.

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Full PDF Text Transcription

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FGW75N65WE http://www.fujielectric.com/products/semiconductor/ Discrete IGBT Discrete IGBT (High-Speed W series) 650V / 75A Features Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc.) Applications Uninterruptible power supply PV Power coditionner Inverter welding machine Maximum Ratings and Characteristics Absolute Maximum Ratings at Tj=25°C (unless otherwise specified) Items Collector-Emitter Voltage Gate-Emitter Voltage Transient Gate-Emitter Voltage DC Collector Current Pulsed Collector Current Symbols VCES VGES IC@25 IC@100 ICP Turn-Off Safe Operating Area - Diode Forward Current IF@25 IF@100 Diode Pulsed Current IFP IGBT Max. Power Dissipation PD_IGBT FWD Max.
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