FMV10N60E Description
2.083 58.0 Unit °C/W °C/W Note 1 : Stating Tch=25°C, IAS =4A, L=47.7mH, Vcc=60V, RG =50Ω E AS limited by maximum channel temperature and avalanche current. See to 'Avalanche Energy' graph.
FMV10N60E is N-CHANNEL SILICON POWER MOSFET manufactured by Fuji Electric.
| Part Number | Description |
|---|---|
| FMV10N80E | N-CHANNEL SILICON POWER MOSFET |
| FMV11N60E | N-CHANNEL SILICON POWER MOSFET |
| FMV11N90E | N-CHANNEL SILICON POWER MOSFET |
| FMV12N50E | N-CHANNEL SILICON POWER MOSFET |
| FMV12N50ES | N-CHANNEL SILICON POWER MOSFET |
2.083 58.0 Unit °C/W °C/W Note 1 : Stating Tch=25°C, IAS =4A, L=47.7mH, Vcc=60V, RG =50Ω E AS limited by maximum channel temperature and avalanche current. See to 'Avalanche Energy' graph.