FMV10N80E Description
0.862 50.0 Unit °C/W °C/W Note 1 : Stating Tch=25°C, IAS=4.0A, L=65.6mH, Vcc=80V, RG =10Ω, E AS limited by maximum channel temperature and avalanche current. Pulse width limited by maximum channel temperature.
FMV10N80E is N-CHANNEL SILICON POWER MOSFET manufactured by Fuji Electric.
| Part Number | Description |
|---|---|
| FMV10N60E | N-CHANNEL SILICON POWER MOSFET |
| FMV11N60E | N-CHANNEL SILICON POWER MOSFET |
| FMV11N90E | N-CHANNEL SILICON POWER MOSFET |
| FMV12N50E | N-CHANNEL SILICON POWER MOSFET |
| FMV12N50ES | N-CHANNEL SILICON POWER MOSFET |
0.862 50.0 Unit °C/W °C/W Note 1 : Stating Tch=25°C, IAS=4.0A, L=65.6mH, Vcc=80V, RG =10Ω, E AS limited by maximum channel temperature and avalanche current. Pulse width limited by maximum channel temperature.