2SK2689-01MR Datasheet | Fuji Electric

Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated N-channel MOS-FET 30V 0,01Ω 50A 40W > Outline Drawing > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters > Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC=25°C), unless otherwise specified Item Drain-Source-Voltage Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Maximum Avalanche Energy Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS ID I D(puls) V GS E AV PD T ch T stg Rating 30 50 200 ±16 520 40 150 -55 ~ +150 - L=0,277m H, VCC=12V > Equivalent Circuit Unit V A A V m J- W °C °C - Electrical Characteristics (TC=25°C), unless otherwise specified Item Drain-Source Breakdown-Voltage Gate Threshhold Voltage Zero Gate Voltage Drain Current Gate Source Leakage Current Drain Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On-Time ton (ton=td(on)+tr) Turn-Off-Time toff (ton=td(off)+tf) Avalanche Capability Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge Symbol V (BR)DSS V GS(th) I DSS I R g C C C t t t t I V t Q GSS DS(on) fs iss oss rss d(on) r d(off) f AV SD rr rr Test conditions ID=1m A VGS=0V ID=1m A VDS=VGS VDS=30V Tch=25°C VGS=0V Tch=125°C VGS=±16V VDS=0V ID=25A VGS=4V VGS=10V ID=25A VDS=25V VDS=25V VGS=0V f=1MHz VCC=15V ID=50A VGS=10V RGS=10 Ω Tch=25°C L = 100µH IF=2x IDR VGS=0V Tch=25°C IF=2x IDR VGS=0V -d IF/dt=100A/µs Tch=25°C Min. 30 1,0 Typ. 1,5 10 0,2 10 0,012 0,0075 45 2750 1300 600 13 55 180 150 1,14 85 0,17 Max. 2,0 500 1,0 100 0,017 0,01 4130 1950 900 20 83 270 230 1,71 130 Unit V V µA m A n A Ω Ω S p F p F p F ns ns ns ns A V ns µC - Thermal Characteristics Item Thermal Resistance Symbol R th(ch-a) R th(ch-c) Test conditions channel to air channel to case Min. Typ. Max. Unit 62,5 °C/W 3,125 °C/W Collmer Semiconductor - P.O. Box 702708 - Dallas TX -...