2SK2695-01 Datasheet | Fuji Electric

Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated N-channel MOS-FET 700V 1,85Ω ±5A 60W > Outline Drawing > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters > Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC=25°C), unless otherwise specified Item Drain-Source-Voltage Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Maximum Avalanche Energy Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS ID I D(puls) V GS E AV PD T ch T stg Rating 700 ±5 ±20 ±30 222.8 60 150 -55 ~ +150 Unit V A A V m J- W °C °C - Electrical Characteristics (TC=25°C), unless otherwise specified Item Drain-Source Breakdown-Voltage Gate Threshhold Voltage Zero Gate Voltage Drain Current Gate Source Leakage Current Drain Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On-Time ton (ton=td(on)+tr) Turn-Off-Time toff (ton=td(off)+tf) Avalanche Capability Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge Symbol BV DSS V GS(th) I DSS I R g C C C t t t t I V t Q GSS DS(on) fs iss oss rss d(on) r d(off) f AV SD rr rr Test conditions ID=1m A VGS=0V ID=1m A VDS=VGS VDS=700V Tch=25°C VGS=0V Tch=125°C VGS=±30V VDS=0V ID=2,5A VGS=10V ID=2,5A VDS=25V VDS=25V VGS=0V f=1MHz VCC=600V VGS=10V ID=5A RGS=10 Ω Tch=25°C L = 100µH IF=2 X IDR VGS=0V Tch=25°C IF=IDR VGS=0V -d I/dt=100A/µs Tch=25°C Min. 700 2,5 Typ. 3,0 10 0,2 10 1,4 4 820 120 65 20 45 80 45 0,93 610 5,5 Max. 3,5 500 1,0 100 1,85 1230 180 100 30 70 120 70 1,4 Unit V V µA m A n A Ω S p F p F p F ns ns ns ns A V ns µC - Thermal Characteristics Item Thermal Resistance R R th(ch-c) th(ch-a) Symbol channel to case channel to ambient Min. Typ. Max. 2,08 75,0 Unit °C/W °C/W N-channel MOS-FET 700V FAP-IIIB Series Drain-Source On-State Resistance vs. Tch RDS(on) = f(Tch); ID=2,5A; VGS=10V 1,85Ω ±5A 60W...