2SK2900-01
2SK2900-01 is N-channel MOS-FET manufactured by Fuji Electric.
Features
- High Current
- Low On-Resistance
- No Secondary Breakdown
- Low Driving Power
- Avalanche Rated
FAP-IIIB Series
N-channel MOS-FET
60V 14,5mΩ ±45A 60W
> Outline Drawing
> Applications
- Motor Control
- General Purpose Power Amplifier
- DC-DC converters
> Maximum Ratings and Characteristics
- Absolute Maximum Ratings (TC=25°C), unless otherwise specified
Item
Symbol
Rating
Drain-Source-Voltage Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Maximum Avalanche Energy Max. Power Dissipation Operating and Storage Temperature Range
V DS ID I D(puls) V GS E AV PD T ch T stg
60 ±45 ±180 ±30 461.9
60 150 -55 ~ +150
- L=0,304m H, VCC=24V
Unit V A A V m J- W °C °C
- Electrical Characteristics (TC=25°C), unless otherwise specified
Item
Symbol
Test conditions
Drain-Source Breakdown-Voltage
BV DSS
ID=1m A
VGS=0V
Gate Threshhold Voltage
V GS(th)
ID=10m A
VDS=VGS
Zero Gate Voltage Drain Current
I...
