FGW75N65WE
FGW75N65WE is Discrete IGBT manufactured by Fuji Electric.
Features
Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc.)
Applications Uninterruptible power supply PV Power coditionner Inverter welding machine
Maximum Ratings and Characteristics
Absolute Maximum Ratings at Tj=25°C (unless otherwise specified)
Items Collector-Emitter Voltage Gate-Emitter Voltage Transient Gate-Emitter Voltage
DC Collector Current
Pulsed Collector Current
Symbols VCES
VGES
IC@25 IC@100 ICP
Turn-Off Safe Operating Area
- Diode Forward Current
IF@25 IF@100
Diode Pulsed Current
IGBT Max. Power Dissipation
PD_IGBT
FWD Max. Power Dissipation
PD_FWD
Operating Junction Temperature Tj
Storage Temperature
Tstg
Characteristics 650 ±20 ±30 124 75 300
111 75 300 520 260 -40 ~ +175 -55 ~ +175
Unit
Remarks
V Tp<1µs
A TC=25°C
A TC=100°C
A Note
- 1
VCE≤650V Tj≤175°C
A Note
-...
