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29F160TE - 16M (2M X 8/1M X 16) BIT

Datasheet Summary

Description

The MBM29F160TE/BE is a 16M-bit, 5.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each.

The MBM29F160TE/BE is offered in a 48-pin TSOP (I) package.

The device is designed to be programmed in-system with the standard system 5.0 V VCC supply.

Features

  • a sector erase architecture. The sector mode allows each sector to be erased and reprogrammed without affecting other sectors. The MBM29F160TE/BE is erased when shipped from the factory. www. DataSheet4U. com The device features single 5.0 V power supply operation for both read and write functions. Internally generated and regulated voltages are provided for the program and erase operations. A low VCC detector automatically inhibits write operations on the loss of power. The end of program or eras.

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Datasheet Details

Part number 29F160TE
Manufacturer Fujitsu Media Devices
File Size 622.03 KB
Description 16M (2M X 8/1M X 16) BIT
Datasheet download datasheet 29F160TE Datasheet
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Full PDF Text Transcription

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FUJITSU SEMICONDUCTOR DATA SHEET DS05-20879-2E FLASH MEMORY CMOS 16M (2M × 8/1M × 16) BIT www.DataSheet4U.com MBM29F160TE/BE-55/-70/-90 s GENERAL DESCRIPTION The MBM29F160TE/BE is a 16M-bit, 5.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29F160TE/BE is offered in a 48-pin TSOP (I) package. The device is designed to be programmed in-system with the standard system 5.0 V VCC supply. 12.0 V VPP is not required for write or erase operations. The device can also be reprogrammed in standard EPROM programmers. The standard MBM29F160TE/BE offers access times of 55 ns, 70 ns and 90 ns, allowing operation of high-speed microprocessors without wait states.
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