MB82DS01181E Datasheet | Fujitsu Semiconductor Limited

DESCRIPTION Mobile Phone Application Specific Memory MB82DS01181E is a Fast Cycle Random Access Memory (FCRAM) with asynchronous Static Random Access Memory (SRAM) interface containing 16,777,216 storages accessible in a 16-bit format. MB82DS01181E is suited for mobile applications such as Cellular Handset and PDA. Note: FCRAM is a trademark of Fujitsu Limited, Japan. - FEATURES - - - - - - - - - - - Asynchronous SRAM Interface 1 M word × 16-bit Organization Low-voltage Operating Conditions Wide Operating Temperature Read/Write Cycle Time Fast Random Access Time Active current Standby current Power down current Byte Control Shipping Form : VDD = +1.7 V to +1.95 V : TA = - 30 °C to +85 °C : t RC = t WC = 80 ns Min : t AA = t CE = 70 ns Max : IDDA1 = 20 m A Max : IDDS1 = 100 µA Max : IDDPS = 10 µA Max : Wafer / Chip MB82DS01181E-70L-A - PIN DESCRIPTION Pin Name A19 to A0 CE1 CE2 WE OE LB UB DQ8 to DQ1 DQ16 to DQ9 VDD VSS Address Input Chip Enable 1 (Low Active) Chip Enable 2 (High Active) Write Enable (Low Active) Output Enable (Low Active) Lower Byte Control (Low Active) Upper Byte Control (Low Active) Lower Byte Data Input/Output Upper Byte Data Input/Output Power Supply Ground Description MB82DS01181E-70L-A - BLOCK DIAGRAM VDD VSS A19 to A0 Address Latch & Buffer Row Decoder Memory Cell Array 16,777,216 bits DQ8 to DQ1 I/O Data DQ16 to DQ9 Input Data Latch & Control Sense / Switch Output Data Column Decoder Address Latch & Buffer CE2 Power control Timing control CE1 WE LB UB OE MB82DS01181E-70L-A - FUNCTION TRUTH TABLE Mode Standby (Deselect) Output Disable- 1 No Read Read (Upper Byte) Read (Lower Byte) Read (Word) No Write Write (Upper Byte) Write (Lower Byte) Write (Word) Power Down - 2 L X X X L H H H L CE2 CE1 H WE X H OE X H LB X X H H L L H H L L X UB X X H L H L H L H L X A19 to A0 DQ8 to DQ1 DQ16 to DQ9 X - 3 Valid Valid Valid Valid Valid Valid Valid Valid X High-Z High-Z High-Z High-Z Output Valid Output Valid Invalid Invalid Input Valid...