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MB82DS01181E Datasheet Mobile Phone Application Specific Memory

Manufacturer: Fujitsu Semiconductor Limited

Overview: .. FUJITSU SEMICONDUCTOR DATA SHEET DS05-11434-1E MEMORY Mobile FCRAMTM CMOS 16 Mbit (1 M word × 16 bit).

General Description

Mobile Phone Application Specific Memory MB82DS01181E is a Fast Cycle Random Access Memory (FCRAM) with asynchronous Static Random Access Memory (SRAM) interface containing 16,777,216 storages accessible in a 16-bit format.

MB82DS01181E is suited for mobile applications such as Cellular Handset and PDA.

Note: FCRAM is a trademark of Fujitsu Limited, Japan.

Key Features

  • Asynchronous SRAM Interface 1 M word × 16-bit Organization Low-voltage Operating Conditions Wide Operating Temperature Read/Write Cycle Time Fast Random Access Time Active current Standby current Power down current Byte Control Shipping Form : VDD = +1.7 V to +1.95 V : TA =.
  • 30 °C to +85 °C : tRC = tWC = 80 ns Min : tAA = tCE = 70 ns Max : IDDA1 = 20 mA Max : IDDS1 = 100 µA Max.

More Datasheets from Fujitsu Semiconductor Limited

Part Number Description
MB82D01171A 16 Mbit (1 M word x 16 bit) Mobile Phone Application Specific Memory
MB82DBS04163C MEMORY Mobile FCRAMTM CMOS 64 M Bit
MB82DP02183C-65L Mobile Phone Application Specific Memory
MB82DP02183D 32M Bit (2 M word X 16 bit) Mobile Phone Application Specific Memory
MB82DP02183E-65L 32 Mbit Mobile FCRAM
MB82DP04183C 64M Bit (4 M word X 16 bit) Mobile Phone Application Specific Memory
MB81C4251 1M-Bit Dual Port CMOS DRAM
MB81C4253 1M-Bit Dual Port CMOS DRAM
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MB81C81A CMOS 256K-BIT HIGH-SPEED SRAM

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