Datasheet Summary
FUJITSU SEMICONDUCTOR DATA SHEET
DS05-50109-1E
MCP (Multi-Chip Package) FLASH MEMORY & SRAM
CMOS
16M (×16) FLASH MEMORY & 1M (× 8) STATIC RAM
MB84VA2106-10/MB84VA2107-10 s Features
- Power supply voltage of 2.7 to 3.6 V
- High performance 100 ns maximum access time
- Operating Temperature
- 20 to +85°C
- FLASH MEMORY
- Minimum 100,000 write/erase cycles
- Sector erase architecture One 8 K word, two 4 K words, one 16 K word, and thirty one 32 K words. Any bination of sectors can be concurrently erased. Also supports full chip erase.
- Boot Code Sector Architecture MB84VA2106: Top sector MB84VA2107: Bottom sector
- Embedded EraseTM Algorithms Automatically pre-programs and erases the...