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MB84VA2107 - (MB84VA2106 / MB84VA2107) 16M (x16) FLASH MEMORY & 1M (x 8) STATIC RAM

This page provides the datasheet information for the MB84VA2107, a member of the MB84VA2106 (MB84VA2106 / MB84VA2107) 16M (x16) FLASH MEMORY & 1M (x 8) STATIC RAM family.

Features

  • Power supply voltage of 2.7 to 3.6 V.
  • High performance 100 ns maximum access time.
  • Operating Temperature.
  • 20 to +85°C.
  • FLASH MEMORY.
  • Minimum 100,000 write/erase cycles.
  • Sector erase architecture One 8 K word, two 4 K words, one 16 K word, and thirty one 32 K words. Any combination of sectors can be concurrently erased. Also supports full chip erase.
  • Boot Code Sector Architecture MB84VA2106: Top sector MB84VA2107: Bottom sec.

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Datasheet Details

Part number MB84VA2107
Manufacturer Fujitsu Media Devices
File Size 423.39 KB
Description (MB84VA2106 / MB84VA2107) 16M (x16) FLASH MEMORY & 1M (x 8) STATIC RAM
Datasheet download datasheet MB84VA2107 Datasheet
Additional preview pages of the MB84VA2107 datasheet.

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  • MB84VA2105 - (MB84VA2104 / MB84VA2105) 16M (x 8) FLASH MEMORY & 1M (x 8) STATIC RAM
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  • MB84VA2000 - (MB84VA2000 / MB84VA2001) 8M (X 8) FLASH MEMORY & 2M (X 8) STATIC RAM

Full PDF Text Transcription

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FUJITSU SEMICONDUCTOR DATA SHEET DS05-50109-1E MCP (Multi-Chip Package) FLASH MEMORY & SRAM CMOS 16M (×16) FLASH MEMORY & 1M (× 8) STATIC RAM MB84VA2106-10/MB84VA2107-10 s FEATURES • Power supply voltage of 2.7 to 3.6 V • High performance 100 ns maximum access time • Operating Temperature –20 to +85°C — FLASH MEMORY • Minimum 100,000 write/erase cycles • Sector erase architecture One 8 K word, two 4 K words, one 16 K word, and thirty one 32 K words. Any combination of sectors can be concurrently erased. Also supports full chip erase.
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