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MB84VD2108x - (MB84VD2108x / MB84VD2109x) 16M (x8/x16) FLASH MEMORY & 2M (x8/x16) STATIC RAM

General Description

Pin no.

1, A17 to A19 SA DQ0 to DQ15 CEf CE1s CE2s OE WE RY/BY UBs LBs CIOf CIOs RESET WP/ACC N.C.

Key Features

  • Power supply voltage of 2.7 V to 3.6 V.
  • High performance 85 ns maximum access time.
  • Operating Temperature.
  • 25 °C to +85 °C.
  • Package 61-ball FBGA, 56-pin TSOP(I) (Continued) s.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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( DataSheet : www.DataSheet4U.com ) FUJITSU SEMICONDUCTOR DATA SHEET DS05-50201-3E Stacked MCP (Multi-Chip Package) FLASH MEMORY & SRAM CMOS 16M (×8/×16) FLASH MEMORY & 2M (×8/×16) STATIC RAM MB84VD2108X-85/MB84VD2109X-85 s FEATURES • Power supply voltage of 2.7 V to 3.6 V • High performance 85 ns maximum access time • Operating Temperature −25 °C to +85 °C • Package 61-ball FBGA, 56-pin TSOP(I) (Continued) s PRODUCT LINE UP Flash Memory Ordering Part No. VCCf*, VCCs* = 3.0 V −0.3 V +0.6 V SRAM MB84VD2108X-85/MB84VD2109X-85 85 85 35 85 85 45 Max. Address Access Time (ns) Max. CE Access Time (ns) Max. OE Access Time (ns) *: Both VCCf and VCCs must be in recommended operation range when either part is being accessed.