MB84VD22181FM-70 Overview
.. FUJITSU SEMICONDUCTOR DATA SHEET DS05-50229-2E Stacked MCP (Multi-Chip Package) FLASH MEMORY & SRAM CMOS 32M (×16) FLASH MEMORY & 4M (×16) STATIC RAM MB84VD22181FM-70/MB84VD22191FM-70.
MB84VD22181FM-70 Key Features
- Power Supply Voltage of 2.7 V to 3.1 V
- High Performance 70 ns maximum access time (Flash) 70 ns maximum access time (SRAM)
- Operating Temperature -30 °C to +85 °C
- Package 56-ball FBGA
- FLASH MEMORY
- Simultaneous Read/Write Operations (Dual Bank)
- Minimum 100,000 Write/Erase Cycles
- Sector Erase Architecture Eight 4K word and sixty-three 32K word sectors in word mode Any bination of sectors can be con
- Boot Code Sector Architecture MB84VD22181: Top sector MB84VD22191: Bottom sector
- Embedded EraseTM -2 Algorithms Automatically pre-programs and erases the chip or any sector