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MB84VD2218xEC - (MB84VD2218xEC/EE / MB84VD2219xEC/EE) 32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM

General Description

Pin Name A0 to A17 A

1, A18 to A20 SA DQ0 to DQ15 CEf CE1s CE2s OE WE RY/BY UBs LBs CIOf CIOs RESET WP/ACC N.C.

Key Features

  • Power supply voltage of 2.7 V to 3.3 V.
  • High performance 90 ns maximum access time (Flash) 85 ns maximum access time (SRAM).
  • Operating Temperature.
  • 25 °C to +85 °C.
  • Package 73-ball BGA (Continued) s.

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Other Datasheets by Fujitsu Semiconductor Limited

Part Number Description
MB84VD2218xEE (MB84VD2218xEC/EE / MB84VD2219xEC/EE) 32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM
MB84VD2218xEG (MB84VD2218xEG/EH / MB84VD2219xEG/EH) 32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM
MB84VD2218xEH (MB84VD2218xEG/EH / MB84VD2219xEG/EH) 32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM
MB84VD22181FM-70 (MB84VD22181FM-70 / MB84VD22191FM-70) 32M (X16) FLASH MEMORY & 4M (X16) STATIC RAM
MB84VD22184FM-70 (MB84VD22184FM-70 / MB84VD22194FM-70) 32M (X16) FLASH MEMORY & 4M (X16) STATIC RAM

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( DataSheet : www.DataSheet4U.com ) FUJITSU SEMICONDUCTOR DATA SHEET DS05-50204-3E Stacked MCP (Multi-Chip Package) FLASH MEMORY & SRAM CMOS 32M (× 8/×16) FLASH MEMORY & 4M (× 8/×16) STATIC RAM MB84VD2218XEC-90/MB84VD2219XEC-90 MB84VD2218XEE-90/MB84VD2219XEE-90 s FEATURES • Power supply voltage of 2.7 V to 3.3 V • High performance 90 ns maximum access time (Flash) 85 ns maximum access time (SRAM) • Operating Temperature –25 °C to +85 °C • Package 73-ball BGA (Continued) s PRODUCT LINE UP Flash Memory Ordering Part No. VCCf*, VCCs* = 3.0 V +0.3 V –0.3 V SRAM MB84VD2218XEC/EE-90/MB84VD2219XEC/EE-90 90 90 40 85 85 45 Max. Address Access Time (ns) Max. CE Access Time (ns) Max.