MB84VD2218xEH Overview
( DataSheet : .. ) FUJITSU SEMICONDUCTOR DATA SHEET DS05-50206-1E Stacked MCP (Multi-Chip Package) FLASH MEMORY & SRAM CMOS 32M (× 8/×16) FLASH MEMORY & 4M (× 8/×16) STATIC RAM MB84VD2218XEG-90/MB84VD2219XEG-90 MB84VD2218XEH-90/MB84VD2219XEH-90.
MB84VD2218xEH Key Features
- Power supply voltage of 2.7 V to 3.3 V
- High performance 90 ns maximum access time (Flash) 85 ns maximum access time (SRAM)
- Operating Temperature -25°C to +85°C
- Package 71-ball BGA
- Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes Host system can prog
- Minimum 100,000 write/erase cycles
- Sector erase architecture Eight 4 K words and sixty three 32 K words. Any bination of sectors can be concurrently erased
- Boot Code Sector Architecture MB84VD2218X: Top sector MB84VD2219X: Bottom sector
- Embedded EraseTM Algorithms Automatically pre-programs and erases the chip or any sector
- Embedded ProgramTM Algorithms Automatically writes and verifies data at specified address