MB84VD23280EE Description
( DataSheet : .. ) FUJITSU SEMICONDUCTOR DATA SHEET DS05-50211-4E Stacked MCP (Multi-Chip Package) FLASH MEMORY & SRAM CMOS 64M (×8/×16) FLASH MEMORY & 8M (×8/×16) STATIC RAM MB84VD23280EA/EE-85/90.
MB84VD23280EE Key Features
- Power supply voltage of 2.7 V to 3.3 V
- High performance 85 ns/90 ns maximum access time (Flash) 70 ns maximum access time (SRAM)
- Operating Temperature -25 °C to +85 °C
- Package 101-ball BGA
- Both VCCf and VCCs must be in remended operation range when wither part is being accessed
- FLASH MEMORY
- Simultaneous Read/Write operations (flex bank) Two virtual Banks are chosen from the bination of four physical banks Hos
- Minimum 100,000 write/erase cycles
- Sector erase architecture Sixteen 4 K words and one hundred twenty-six 32 K word. Any bination of sectors can be concurr
- Embedded EraseTM- Algorithms Automatically pre-programs and erases the chip or any sector