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MB84VD23280EE - 64M (x8/x16) FLASH MEMORY & 8M (x8/x16) STATIC RAM

Download the MB84VD23280EE datasheet PDF. This datasheet also covers the MB84VD23280EA variant, as both devices belong to the same 64m (x8/x16) flash memory & 8m (x8/x16) static ram family and are provided as variant models within a single manufacturer datasheet.

General Description

Pin name A18 to A0 A21 to A19, A

1 SA DQ15 to DQ0 CEf CE1s CE2s OE WE RY/BY UBs LBs CIOf CIOs RESET WP/ACC N.C.

Power Power Power Address Inputs (Common) Address Inputs (Flash) Address Input (SRAM) Data Inputs/Outputs (C

Key Features

  • Power supply voltage of 2.7 V to 3.3 V.
  • High performance 85 ns/90 ns maximum access time (Flash) 70 ns maximum access time (SRAM).
  • Operating Temperature.
  • 25 °C to +85 °C.
  • Package 101-ball BGA (Continued) s.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MB84VD23280EA_FujitsuMediaDevices.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Fujitsu Semiconductor Limited

Part Number Description
MB84VD23280EA 64M (x8/x16) FLASH MEMORY & 8M (x8/x16) STATIC RAM
MB84VD23381EF Flash Memory / SRAM
MB84VD23381EJ Flash Memory / SRAM
MB84VD23381FJ Stacked MCP (Multi-Chip Package) FLASH MEMORY & FCRAM
MB84VD23381HJ 64M (X16) FLASH MEMORY & 16M (X16) Mobile FCRAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
( DataSheet : www.DataSheet4U.com ) FUJITSU SEMICONDUCTOR DATA SHEET DS05-50211-4E Stacked MCP (Multi-Chip Package) FLASH MEMORY & SRAM CMOS 64M (×8/×16) FLASH MEMORY & 8M (×8/×16) STATIC RAM MB84VD23280EA/EE-85/90 s FEATURES • Power supply voltage of 2.7 V to 3.3 V • High performance 85 ns/90 ns maximum access time (Flash) 70 ns maximum access time (SRAM) • Operating Temperature –25 °C to +85 °C • Package 101-ball BGA (Continued) s PRODUCT LINEUP Flash Memory –85 Power Supply Voltage (V) Max. Address Access Time (ns) Max. CE Access Time (ns) Max. OE Access Time (ns) VCCf* = 3.0 V 85 85 35 –90 +0.3V –0.3 V SRAM VCCs* = 3.0 V +0.3V –0.3 V 90 90 70 70 35 *: Both VCCf and VCCs must be in recommended operation range when wither part is being accessed.