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MBM29DL162TD - CMOS FLASH MEMORY

Download the MBM29DL162TD datasheet PDF. This datasheet also covers the MBM29DL16xTD variant, as both devices belong to the same cmos flash memory family and are provided as variant models within a single manufacturer datasheet.

General Description

Host system can program or erase in one bank, then immediately and simultaneously read from the other bank Zero latency between read and write operations Read-while-erase Read-while-program Single 3.0 V read, program, and erase Minimizes system level power requirements (Continued) s PROD

Key Features

  • Dual Operation.
  • 0.33 µm Process Technology.
  • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes (Refer to “MBM29DL16XTD/BD Device Bank Divisions Table” in sGENERAL.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MBM29DL16xTD_FujitsuMediaDevices.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
MBM29DL162TD-70 CMOS FLASH MEMORY Fujitsu
MBM29DL162TD-90 CMOS FLASH MEMORY Fujitsu
MBM29DL162TE-12 CMOS FLASH MEMORY Fujitsu
MBM29DL162TE-70 CMOS FLASH MEMORY Fujitsu
MBM29DL162TE-90 CMOS FLASH MEMORY Fujitsu

Other Datasheets by Fujitsu Semiconductor Limited

Part Number Description
MBM29DL162TE CMOS FLASH MEMORY
MBM29DL162BD CMOS FLASH MEMORY
MBM29DL161BD (MBM29DL16xTD/BD) FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT
MBM29DL161BE (MBM29DL16xTE/BE) 16M (2MX8/1MX16) BIT Dual Operation
MBM29DL161TD (MBM29DL16xTD/BD) FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com FUJITSU SEMICONDUCTOR DATA SHEET DS05-20874-7E FLASH MEMORY CMOS 16M (2M × 8/1M × 16) BIT MBM29DL16XTD/BD -70/90 s FEATURES Dual Operation • 0.33 µm Process Technology • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes (Refer to “MBM29DL16XTD/BD Device Bank Divisions Table” in sGENERAL DESCRIPTION) Host system can program or erase in one bank, then immediately and simultaneously read from the other bank Zero latency between read and write operations Read-while-erase Read-while-program • Single 3.0 V read, program, and erase Minimizes system level power requirements (Continued) s PRODUCT LINE UP Part No. Ordering Part No. VCC = 3.3 V VCC = 3.0 V +0.3 V –0.3 V +0.6 V –0.