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MBM29LV016B - 16M (2M x 8) BIT FLASH MEMORY

General Description

The MBM29LV016T/B is a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each.

The MBM29LV016T/B is offered in a 40-pin TSOP packages.

The device is designed to be programmed in-system with the standard system 3.0 V VCC supply.

Key Features

  • Single 3.0 V read, program and erase Minimizes system level power requirements.
  • Compatible with JEDEC-standard commands Uses same software commands as E2PROMs.
  • Compatible with JEDEC-standard world-wide pinouts 40-pin TSOP (I) (Package suffix: PTN-Normal Bend Type, PTR-Reversed Bend Type).
  • Minimum 100,000 program/erase cycles.
  • High performance 80 ns maximum access time.
  • Sector erase architecture One 16K byte, two 8K bytes, one 32K byte, and t.

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📁 Similar Datasheet

Part Number Description Manufacturer
MBM29LV016B-12 16M (2M x 8) BIT FLASH MEMORY Fujitsu
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MBM29LV016B-90 16M (2M x 8) BIT FLASH MEMORY Fujitsu
MBM29LV016T-12 16M (2M x 8) BIT FLASH MEMORY Fujitsu
MBM29LV016T-80 16M (2M x 8) BIT FLASH MEMORY Fujitsu

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FUJITSU SEMICONDUCTOR DATA SHEET DS05-20855-4E FLASH MEMORY CMOS 16M (2M × 8) BIT MBM29LV016T-80/-90/-12/MBM29LV016B-80/-90/-12 s FEATURES • Single 3.0 V read, program and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Uses same software commands as E2PROMs • Compatible with JEDEC-standard world-wide pinouts 40-pin TSOP (I) (Package suffix: PTN-Normal Bend Type, PTR-Reversed Bend Type) • Minimum 100,000 program/erase cycles • High performance 80 ns maximum access time • Sector erase architecture One 16K byte, two 8K bytes, one 32K byte, and thirty-one 64K byte sectors in byte mode Any combination of sectors can be concurrently erased.