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MBM29LV160TE - 16M (2M X 8/1M X 16) BIT

Download the MBM29LV160TE datasheet PDF. This datasheet also covers the MBM29LV160BE variant, as both devices belong to the same 16m (2m x 8/1m x 16) bit family and are provided as variant models within a single manufacturer datasheet.

General Description

The MBM29LV160TE/BE is a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each.

The MBM29LV160TE/BE is offered in a 48-pin TSOP (I), 48-pin CSOP and 48-ball FBGA packages.

Key Features

  • a sector erase architecture. The sector mode allows each sector to be erased and reprogrammed without affecting other sectors. The MBM29LV160TE/BE is erased when shipped from the factory. The device features single 3.0 V power supply operation for both read and write functions. Internally generated and regulated voltages are provided for the program and erase operations. A low VCC detector automatically inhibits write operations on the loss of power. The end of program or erase is detected by Da.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MBM29LV160BE_FujitsuMediaDevices.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
MBM29LV160T-12 16M (2M x 8/1M x 16) BIT FLASH MEMORY Fujitsu
MBM29LV160T-80 16M (2M x 8/1M x 16) BIT FLASH MEMORY Fujitsu
MBM29LV160T-90 16M (2M x 8/1M x 16) BIT FLASH MEMORY Fujitsu
MBM29LV160B-12 16M (2M x 8/1M x 16) BIT FLASH MEMORY Fujitsu
MBM29LV160B-80 16M (2M x 8/1M x 16) BIT FLASH MEMORY Fujitsu

Other Datasheets by Fujitsu Semiconductor Limited

Part Number Description
MBM29LV160T 16M (2M x 8/1M x 16) BIT
MBM29LV160TM (MBM29LV160BM/TM) FLASH MEMORY CMOS 16 M (2M X 8/1M X 16) BIT MirrorFlashTM
MBM29LV160B 16M (2M x 8/1M x 16) BIT FLASH MEMORY
MBM29LV160BE 16M (2M X 8/1M X 16) BIT
MBM29LV160BM Flash Memory

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FUJITSU SEMICONDUCTOR DATA SHEET DS05-20883-2E FLASH MEMORY CMOS 16M (2M × 8/1M × 16) BIT MBM29LV160TE/BE -70/90/12 s GENERAL DESCRIPTION The MBM29LV160TE/BE is a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29LV160TE/BE is offered in a 48-pin TSOP (I), 48-pin CSOP and 48-ball FBGA packages. The device is designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase operations. The device can also be reprogrammed in standard EPROM programmers. The standard MBM29LV160TE/BE offers access times of 70 ns, 90 ns and 120 ns, allowing operation of highspeed microprocessors without wait states.