MBM29LV320BE Datasheet Text
FUJITSU SEMICONDUCTOR DATA SHEET
DS05-20894-1E
FLASH MEMORY
CMOS
32 M (4 M × 8/2 M × 16) BIT
MBM29LV320TE 80/90/10 MBM29LV320BE80/90/10 s DESCRIPTION
The MBM29LV320TE/BE is 32 M-bit, 3.0 V-only Flash memory organized as 4 M bytes of 8 bits each or 2 M words of 16 bits each. The device is offered in a 48-pin TSOP (I) and 63-ball FBGA packages. This device is designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase operations. The device can also be reprogrammed in standard EPROM programmers. The standard device offers access times 80 ns, 90 ns and 100 ns, allowing operation of high-speed microprocessors without wait state. To eliminate bus contention the device has separate chip enable(CE), write enable(WE) and output enable (OE) controls. (Continued) s PRODUCT LINE UP
Part No. Power Supply Voltage (V) Max Address Access Time (ns) Max CE Access Time (ns) Max OE Access Time (ns) 80 80 30 MBM29LV320TE/BE 80 VCC = 3.3 V
+0.3 V
- 0.3 V
90 90 90 35
100
0.6 V VCC = 3.0 V +
- 0.3 V
100 100 35 s PACKAGES
48-pin plastic TSOP (I) Marking Side 48-pin plastic TSOP (I) 63-ball plastic FBGA
(FPT-48P-M19)
Marking Side (FPT-48P-M20)
(BGA-63P-M01)
MBM29LV320TE/BE80/90/10
(Continued)
The device is pin and mand set patible with JEDEC standard E2PROMs. mands are written to the mand register using standard microprocessor write timings. Register contents serve as input to an internal state-machine which controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is similar to reading from 5.0 V and 12.0 V Flash or EPROM devices. The device is programmed by executing the...