FLL300IL-3
FLL300IL-3 is (FLL300IL-1/-2/-3) L-band Medium & High Power GAAS Fets manufactured by Fujitsu Semiconductor Limited.
- Part of the FLL300IL comparator family.
- Part of the FLL300IL comparator family.
FEATURES
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- High Output Power: P1d B = 44.5d Bm (Typ.) High Gain: G1d B = 12.0d B (Typ.)@1.8GHz (FLL300IL-2) High PAE: ηadd = 44% (Typ.) Proven Reliability Hermetically Sealed Package
DESCRIPTION
The FLL300IL-1, FLL300IL-2, FLL300IL-3 are Power Ga As FETs that are specifically designed to provide high power at L-Band frequencies with gain, linearity and efficiency superior to that of silicon devices. The performance in multitone environments for Class AB operation make them ideally suited for base station applications. Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PT Tstg Tch Tc = 25°C Condition Rating 15 -5 100 -65 to +175 175 Unit V V W °C °C
Fujitsu remends the following conditions for the reliable operation of Ga As FETs: 1. The drain-source operating voltage (VDS) should not exceed 10 volts. 2. The forward and reverse gate currents should not exceed 80.4 and -17.4 m A respectively with gate resistance of 25Ω. 3. The operating channel temperature (Tch) should not exceed 145°C.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item Saturated Drain Current Transconductance Pinch-off Voltage Symbol IDSS gm Vp Test Conditions- VDS = 5V, VGS = 0V VDS = 5V, IDS = 7200m A VDS = 5V, IDS = 720m A f=900MHz f=1.8GHz f=2.6GHz f=900MHz f=1.8GHz f=2.6GHz 11.0 10.0 8.0 13.0 12.0 10.0 6.0 44 1.1 8.0 1.5 80 d B d B d B A % °C/W °C 43.0 44.5 d Bm Min. -1.0 -5 Limit Typ. Max. 12 16 6000 -2.0 -3.5 Unit A m S V V
Gate Source Breakdown Voltage VGSO IGS = -720µA FLL300IL-1 Output Power FLL300IL-2 P1d B at 1d B G.C.P. VDS = 10V FLL300IL-3 IDS = 0.5 IDSS FLL300IL-1 (Typ.) Power Gain FLL300IL-2 G1d B at 1d B G.C.P. FLL300IL-3 Drain Current Power added Efficiency Thermal Resistance Idsr ηadd Rth ∆Tch
VDS = 10V IDS = 0.5 IDSS (Typ.) Channel to Case (10V...
