FLL300IP-4
FLL300IP-4 is L-band Medium & High Power GAAS Fets manufactured by Fujitsu Semiconductor Limited.
FEATURES
- -
- - Push-Pull Configuration High PAE: 40% (Typ.) Broad Frequency Range: 3400 to 3600 MHz. Suitable for class A operation.
DESCRIPTION
The FLL300IP-4 is a 30 Watt Ga As FET that employs a push-pull design which offers ease of matching, greater consistency and a broader bandwidth for high power L-band amplifiers. This product is targeted to reduce the size and plexity of highly linear, high power base station transmitting amplifiers. This new product is uniquely suited for use in Wireless Local Loop (WLL) base station amplifiers as it offers high gain, long term reliability and ease of use.
APPLICATIONS
- Solid State Base-Station Power Amplifier.
- WLL munication Systems.
ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25°C)
Parameter Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PT Tstg Tch Tc = 25°C Condition Rating 15 -5 107 -65 to +175 +175 Unit V V W °C °C
Fujitsu remends the following conditions for the reliable operation of Ga As FETs: 1. The drain-source operating voltage (VDS) should not exceed 10 volts. 2. The forward and reverse gate currents should not exceed 54.4 and -17.4m A respectively with gate resistance of 25Ω. 3. The operating channel temperature (Tch) should not exceed 145°C.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item Drain Current Transconductance Pinch-Off Voltage Gate-Source Breakdown Voltage Output Power at 1 d B G.C.P. Power Gain at 1 d B G.C.P. Drain Current Power-Added Efficiency Thermal Resistance Channel Temperature Rise CASE STYLE: IP .. Symbol IDSS gm Vp VGSO P1d B G1d B IDSR ηadd Rth ∆Tch Conditions VDS = 5V, VGS=0V VDS = 5V, IDS=7.2A VDS = 5V, IDS=720m A IGS = -720µA VDS = 10V f=3.6GHz IDS = 6A Note 1 Channel to Case Note 2 Min. -1.0 -5 43.5 7.0 Limits Typ. Max. 12 6000 -2.0 44.5 8.0 6.0 40 1.0 16 -3.5 8.0 1.4 80 Unit A m S V V d Bm d B A % °C/W °C
G.C.P.: Gain pression Point
Note 1: The device shall be measured at a constant VGS...
