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FLL357ME - L-band Medium & High Power GAAS Fets

General Description

The FLL357ME is a Power GaAs FET that is specifically designed to provide high power at L-Band frequencies with gain, linearity and efficiency superior to that of silicon devices.

The performance in multitone environments for Class AB operation make them ideally suited for base station applications.

Key Features

  • High Output Power: P1dB=35.5dBm (Typ. ) High Gain: G1dB=11.5dB (Typ. ) High PAE: ηadd=46% (Typ. ) Proven Reliability Hermetically Sealed Package.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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( DataSheet : www.DataSheet4U.com ) FLL357ME L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB=35.5dBm (Typ.) High Gain: G1dB=11.5dB (Typ.) High PAE: ηadd=46% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL357ME is a Power GaAs FET that is specifically designed to provide high power at L-Band frequencies with gain, linearity and efficiency superior to that of silicon devices. The performance in multitone environments for Class AB operation make them ideally suited for base station applications. This device is assembled in hermetic metal/ceramic package. Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance.