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FLL357ME

Manufacturer: Fujitsu Semiconductor Limited

FLL357ME datasheet by Fujitsu Semiconductor Limited.

FLL357ME datasheet preview

FLL357ME Datasheet Details

Part number FLL357ME
Datasheet FLL357ME_FujitsuMicroelectronics.pdf
File Size 132.29 KB
Manufacturer Fujitsu Semiconductor Limited
Description L-band Medium & High Power GAAS Fets
FLL357ME page 2 FLL357ME page 3

FLL357ME Overview

The FLL357ME is a Power GaAs FET that is specifically designed to provide high power at L-Band frequencies with gain, linearity and efficiency superior to that of silicon devices. The performance in multitone environments for Class AB operation make them ideally suited for base station applications. This device is assembled in hermetic metal/ceramic package.

FLL357ME Key Features

  • High Output Power: P1dB=35.5dBm (Typ.) High Gain: G1dB=11.5dB (Typ.) High PAE: ηadd=46% (Typ.) Proven Reliability Hermet
Fujitsu Semiconductor Limited logo - Manufacturer

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