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MB81C67 Datasheet PDF

Fujitsu MB81C67

MB81C67 is a 16.384 words x 1 bR static random access memory fabricated wRh a CMOS silicon gate process. The MB81C67 offers low power dissipation.
Part No. MB81C67
Datasheet MB81C67 Download
Manufacturer
Fujitsu
Description CMOS 16K-BIT HIGH-SPEED SRAM
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MB81C67 datasheet page 1 preview

ABSOLUTE MAXIMUM RATINGS

(See Note) Rating Symbol Value Unit Supply Voltage Vce -0.5 to +7.0 V Input Voltaae on any pin wRh respect to ND VIN -{3.5 to +7.0 V Output Vott~e on any pin wRh respect to G D VOUT -0.510+7.0 V Output Current Power Dissipation loUT ±50 mA Po 1.2 W Temperature Under Bias I Storage Temperature Ceramic Range I Plastic TSIAS TSTG -10 to +85 °C -65 to +150 -45 to +125 °C Note: Pennanent device damage may occur if absolute maximum ratings are exceeded. Functional operation should be restricted to the conditions as detailed in !he operation sections of !his data sheet. Exposure to absolute maximum rating conditions for extended periods may affect dellioa reliability. CCpyrIght © 1990 by FUJrrsU LIMITED /Old Fujitsu M_1co, Inc. This devIca contains circuitry to protect the Inputs agalnst damage due to high static voltages or electric fields. However, h II advised that normaf precau:lona be takan to avoid appUc:atIon 01 any vohage hlghSl" than maximum rated voltages to this high lrJ1)8dance circuit.
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