MB81C67 Datasheet | Fujitsu Semiconductor Limited

January 1990 Edition 3.0 DATA SHEET FUJITSU MB81 C67-351-451-55 CMOS 16K-BIT HIGH-SPEED SRAM 16K Words x 1 Bit High-Speed CMOS Static Random Access Memory The Fuj Rsu MB81C67 is a 16.384 words x 1 b R static random access memory fabricated w Rh a CMOS silicon gate process. All pins are TTL patible and a single +5 V power supply is required. A chip select (CS) pin permits the selection of an individual package when outputs are OR-tied. and automatically powers down the device. The MB81C67 offers low power dissipation. low cost. and high performance. - Organization: 16.384 words x 1 bit - Static operation: no clocks or refresh required - Access time: 35 ns max. (MB81C67-35) 45 ns max. (MB81C67-45) 55 ns max. (MB81C67-55) - Single +5 V power supply ±1 0% tolerance - TTL patible inputs and outputs - Three-state outputs w Rh OR-tie capac Ry - Chip select for simplified memory expansion. automatic power down - Electrostatic protection for all inputs and outputs - Standard 2O-pin Plastic Package: DIP MB81C67-xx P o Standard 20-pad Ceramic Package: LCC MB81C67-xx TV - Standard 20-pin Ceramic Package: CERDIP MB81C67-xx Z - Pin patible w Rh Fujitsu MB8167A ~ CERAMIC PACKAGE CERDIP Dl P-20C-C03 ~ ,CERAMIC PACKAGE LCC-20C-F01 PLASTIC PACKAGE DIP-20P-M01 PIN ASSIGNMENT .. Absolute Maximum Ratings (See Note) Rating Symbol Value Unit Supply Voltage Vce -0.5 to +7.0 Input Voltaae on any pin w Rh respect to ND -{3.5 to...