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MB85RC64V Datasheet 64k-bit I2c Memory Fram

Manufacturer: Fujitsu Semiconductor Limited

Overview: FUJITSU SEMICONDUCTOR DATA SHEET Memory FRAM 64 K (8 K  8) Bit I2C MB85RC64V DS501-00013-5v0-E.

General Description

The MB85RC64V is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells.

Unlike SRAM, the MB85RC64V is able to retain data without using a data backup battery.

The read/write endurance of the nonvolatile memory cells used for the MB85RC64V has improved to be at least 1012 cycles, significantly outperforming other nonvolatile memory products in the number.

Key Features

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  • Bit configuration : 8,192 words  8 bits.
  • Two-wire serial interface : Fully controllable by two ports: serial clock (SCL) and serial data (SDA).
  • Operating frequency : 1 MHz (Max).
  • Read/write endurance : 1012 times / byte.
  • Data retention : 10 years (  85 C), 95 years (  55 C), over 200 years (  35 C).
  • Operating power supply voltage : 3.0 V to 5.5 V.
  • Low-power consumption : Operating power supply current 90 A (Typ @.

More Datasheets from Fujitsu Semiconductor Limited

Part Number Description
MB85RC64 64K-Bit I2C Memory FRAM
MB85RC64A 64K-Bit I2C Memory FRAM
MB85RC64TA 64K-Bit I2C Memory FRAM
MB85RC04V 4K-bit I2C Memory FRAM
MB85RC128 128 K (16 K x 8) Bit I2C
MB85RC16 16 K (2 K x 8) Bit I2C
MB85RC16V 16K (2K x 8) Bit I2C
MB85RC256V 256K (32K x 8)Bit I2C
MB85R1001A 1 M Bit (128 K x 8)
MB85R1002A 1 M Bit (64 K x 16)

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