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MB85RC64V - 64K-Bit I2C Memory FRAM

General Description

The MB85RC64V is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells.

Key Features

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  • Bit configuration : 8,192 words  8 bits.
  • Two-wire serial interface : Fully controllable by two ports: serial clock (SCL) and serial data (SDA).
  • Operating frequency : 1 MHz (Max).
  • Read/write endurance : 1012 times / byte.
  • Data retention : 10 years (  85 C), 95 years (  55 C), over 200 years (  35 C).
  • Operating power supply voltage : 3.0 V to 5.5 V.
  • Low-power consumption : Operating power supply current 90 A (Typ @.

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Part Number Description
MB85RC64 64K-Bit I2C Memory FRAM
MB85RC64A 64K-Bit I2C Memory FRAM
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FUJITSU SEMICONDUCTOR DATA SHEET Memory FRAM 64 K (8 K  8) Bit I2C MB85RC64V DS501-00013-5v0-E ■ DESCRIPTION The MB85RC64V is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC64V is able to retain data without using a data backup battery. The read/write endurance of the nonvolatile memory cells used for the MB85RC64V has improved to be at least 1012 cycles, significantly outperforming other nonvolatile memory products in the number. The MB85RC64V does not need a polling sequence after writing to the memory such as the case of Flash memory or E2PROM.