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MB85RC64A - 64K-Bit I2C Memory FRAM

General Description

The MB85RC64A is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells.

Key Features

  • Bit configuration : 8,192 words × 8 bits.
  • Two-wire serial interface : Fully controllable by two ports: serial clock (SCL) and serial data (SDA).
  • Operating frequency : 1 MHz (Max).
  • Read/write endurance : 1012 times / byte.
  • Data retention : 10 years ( + 85 °C), 95 years ( + 55 °C), over 200 years ( + 35 °C).
  • Operating power supply voltage : 2.7 V to 3.6 V.
  • Low power consumption : Operating power supply current 250 μA (Ty.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FUJITSU SEMICONDUCTOR DATA SHEET Memory FRAM 64 K (8 K × 8) Bit I2C MB85RC64A DS501-00019-2v0-E ■ DESCRIPTION The MB85RC64A is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC64A is able to retain data without using a data backup battery. The read/write endurance of the nonvolatile memory cells used for the MB85RC64A has improved to be at least 1012 cycles, significantly outperforming Flash memory and E2PROM in the number. The MB85RC64A does not need a polling sequence after writing to the memory such as the case of Flash memory or E2PROM.