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MBM100470 - ECL RAM

Description

The Fujitsu MBM100470 is fully decoded 4096-bit ECl read/write random access memory designed for high-speed scratch pad, control and buffer storage applications.

Features

  • on-chip voltage/temperature compensation for improved noise margin. The MBM100470 offers extremely small cell and chip size, realized.

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FUJITSU MICROELECTRONICS ECL 4096·BIT BIPOLAR RANDOM ACCESS MEMORY MBMI00470 DESCRIPTION The Fujitsu MBM100470 is fully decoded 4096-bit ECl read/write random access memory designed for high-speed scratch pad, control and buffer storage applications. The device is organized ad 4096 words by one bit, and it features on-chip voltage/temperature compensation for improved noise margin. The MBM100470 offers extremely small cell and chip size, realized FEATURES • 4096 words x 1-bit organization • On-chip voltage/temperature compensation for improved noise margin • Address access time: 20ns Max. 14ns Typ. through the use of Fujitsu's patented DOPOS (Doped Polysilicon) as well as lOP (Isolation by Oxide and Polysilicon), processing.
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