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630A - N-Channel Enhancement Mode Power MOSFET

Key Features

  • VDSS RDS(ON) ID @ 10V (typ) 200V 0.21Ω 9A.
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability.

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Datasheet Details

Part number 630A
Manufacturer GFD
File Size 1.91 MB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet 630A Datasheet

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GOFORD Description Features VDSS RDS(ON) ID @ 10V (typ) 200V 0.21Ω 9A • Fast switching • 100% avalanche tested • Improved dv/dt capability Application • DC Motor Control and Class D Amplifier • Uninterruptible Power Supply (UPS) • Automotive 630A TO-252 TO-251 Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter VDSS Drain-Source Voltage VGSS ID IDM EAS dv/dt Gate-Source Voltage Continuous Drain Current Pulsed Drain Current note1 Single Pulsed Avalanche Energy note2 Peak Diode Recovery Energy note3 TC = 25℃ TC = 100℃ Power Dissipation PD Linear Derating Factor TC = 25℃ TC > 25℃ RθJC Thermal Resistance, Junction to Case TJ, TSTG Operating and Storage Temperature Range *Drain current limited by maximum junction temperature Max.