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630AT - N-Channel Enhancement Mode Power MOSFET

General Description

excellent RDS(ON) , low gate charge.

It can be used in a wide variety of applications.

Key Features

  • l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.5V) 200V 11A < 250mΩ < 300mΩ l 100% Avalanche Tested l RoHS Compliant Schematic diagram.

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Datasheet Details

Part number 630AT
Manufacturer GOFORD
File Size 0.97 MB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet 630AT Datasheet

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Full PDF Text Transcription (Reference)

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630AT N-Channel Enhancement Mode Power MOSFET Description The 630AT uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.