630AT Description
The 630AT uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.
630AT is N-Channel Enhancement Mode Power MOSFET manufactured by GOFORD.
| Manufacturer | Part Number | Description |
|---|---|---|
| GFD GFD |
630A | N-Channel Enhancement Mode Power MOSFET |
| ROUM ROUM |
630 | 9A 200V N-channel Enhancement Mode Power MOSFET |
Bourns |
6302-RC | Varnished Chokes |
Bourns |
6304-RC | Varnished Chokes |
Bourns |
6306-RC | Varnished Chokes |
The 630AT uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.