Galaxy Century Microelectronics 1SS401
Schottky barrier diode
FEATURES
● Small total capacitance.● Low reverse current.
● Low forward voltage:VF=0.38V(typ). Pb Lead-free Production specification 1SS401
APPLICATIONS
● For general purpose applications. ORDERING INFORMATION Type No. Marking 1SS401 D9 SOT-323 Package Code SOT-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Parameter Symbol Limits Non-Repetitive Peak reverse voltage Diode reverse voltage Average rectified output current Power Dissipation Junction temperature Storage temperature range VRM VR IO Pd Tj Tstg 25 20 300 100 125 -55 to +125 Unit V V mA mW ℃ ℃ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions Reverse breakdown voltage V(BR)R IR=100μA Reverse current Forward voltage Diode capacitance IR VR=20V IF=1mA VF IF=10mA IF=300mA CD VR=0V, f=1MHz MIN Typ. 20 0.16 0.22 0.38 46 MAX 50 UNIT V μA V 0.45 pF PACKAGE OUTLINE F014 Rev.A 1 Schottky Barrie