Toshiba 1SS401
Silicon Diode
| Part No. | 1SS401 |
|---|---|
| Datasheet | 1SS401 Download |
| Manufacturer |  Toshiba |
| Description | Silicon Diode |
| Buy | Stock & Price |
APPLICATIONS
1SS401 Unit: mm z Low forward voltage z Low reverse current z Small total capacitance : VF (3) = 0.38 V (typ.) : IR = 50μA (max) : CT = 46 pF (typ.)ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage Reverse voltage Maximum (peak) forward current Average forward current Power dissipation Junction temperature Storage temperature range Operating temperature range VRM 25 V VR 20 V IFM 700 mA IO 300 mA P 100 mW JEDEC JEITA ― SC-70 Tj 125 °C TOSHIBA 1-2P1D Tstg −55 to 125 °C Weigh: 0.006 g(typ.) Topr −40 to 100 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, et
