Galaxy Century Microelectronics 2SA1579
PNP Silicon Transistor
FEATURES
● Power dissipation.(PC=200mW)● Excellent HFE Linearity. Pb Lead-free Production specification 2SA1579
APPLICATIONS
● General purpose application. ORDERING INFORMATION Type No. Marking 2SA1579 RP/ RR/RS SOT-323 Package Code SOT-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage -120 VCEO Collector-Emitter Voltage -120 VEBO Emitter-Base Voltage -5 IC Collector Current -Continuous -50 PC Collector Dissipation 200 Tj,Tstg Junction and Storage Temperature -55 to +150 Units V V V mA mW ℃ F031 Rev.A 1 Production specification PNP Silicon Epitaxial Planar Transistor 2SA1579ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage V(BR)CBO V(BR)CEO V(BR)EBO IC=-50μA,