SeCoS Halbleitertechnologie GmbH 2SA1579
PNP Silicon Plastic Encapsulated Transistor
FEATURES
High Breakdown Voltage. (BVCEO = -120V) Complementary of the 2SC4102 A L 3 SOT-323 3 Top View C B 1 2 2 CLASSIFICATION OF hFE Product-Rank Range Marking 2SA1579-R 180~390 RR 2SA1579-S 270~560 RS 1 K E D F G H J REF. PACKAGE INFORMATION Package SOT-323 MPQ 3K LeaderSize 7’ inch A B C D E F Millimeter Min. Max. 1.80 2.20 1.80 2.45 1.15 1.35 0.80 1.10 1.20 1.40 0.20 0.40 REF. G H J K L Millimeter Min. Max. 0.100 REF. 0.525 REF. 0.08 0.25 0.650 TYP. Collector● Base Emitter
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise noted) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Junction and Storage Temperature Symbol VCBO VCEO VEBO IC PC TJ, TSTG Ratings -120 -120 -5 -50 100 150, -55~150 Unit V V V mA mW °CELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted) Parameter Collector to Base Breakdown Voltage Collector to Emitter Breakdown Emitter to Base Breakdown...