LGE 2SA1579
PNP Transistor
FEATURES
High breakdown voltage. (BVCEO = -120V) Complements the 2SC4102 2SA1579 SOT-323 Transistor(PNP) SOT-323MAXIMUM RATINGS
(TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector- Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction Temperature Storage Temperature Value -120 -120 -5 -50 100 150 -55-150 Units V V V mA mW ℃ ℃ Dimensions in inches and (millimeters)ELECTRICAL CHARACTERISTICS
(Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Symbol Test conditions V(BR)CBO IC=-50μA,IE=0 V(BR)CEO IC=-1mA,IB=0 V(BR)EBO IE=-50μA,IC=0 ICBO VCB=-100V,IE=0 IEBO VEB=-4V,IC=0 hFE VCE=-6V,IC