2SC4102 - Silicon Transistor

Galaxy Microelectronics

Key Features

Excellent hFE linearity.
Power dissipation:PCM=200mW Pb Lead-free Production specification 2SC4102.

2SC4102 silicon transistor by Galaxy Microelectronics - Datasheet Preview

Datasheet Details

Part number	2SC4102
Manufacturer	Galaxy Microelectronics
File Size	115.11 KB
Description	Silicon Transistor
Datasheet	2SC4102 Datasheet

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Silicon Epitaxial Planar Transistor FEATURES  Excellent hFE linearity.  Power dissipation:PCM=200mW Pb Lead-free Production specification 2SC4102 APPLICATIONS  NPN Silicon Epitaxial Planar Transistor. ORDERING INFORMATION Type No. Marking 2SC4102 TP/TR/TS SOT-323 Package Code SOT-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO VCEO VEBO IC PC Tj,Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction and Storage Temperature 120 120 5 50 200 -55 to +150 Units V V V mA mW ℃ F037 Rev.A www.gmesemi.