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2SC4102 - High-voltage Amplifier Transistor

Key Features

  • High breakdown voltage. (VCEO = 120V) 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 120 120 5 50 0.2 150 -55 to +150 Unit V V V mA W Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown vo.

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SMD Type High-voltage Amplifier Transistor 2SC4102 Transistors Features High breakdown voltage.(VCEO = 120V) 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 120 120 5 50 0.