Galaxy Century Microelectronics 2SC4215
NPN Silicon Transistor
FEATURES
● Small reverse transfer capacitance.● Low noise figure. Pb Lead-free
APPLICATIONS
● FM,RF,MIX,IF AmplifierAPPLICATIONS
. Production specification 2SC4215 ORDERING INFORMATION Type No. Marking 2SC4215 QR/QO/QY SOT-323 Package Code SOT-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage 40 VCEO Collector-Emitter Voltage 30 VEBO Emitter-Base Voltage 4 IC Collector Current -Continuous 20 IB Base Current 4 PC Collector Dissipation 150 Tj,Tstg Junction and Storage Temperature -55 to +150 Units V V V mA mA mW ℃ F041 Rev.A 1 Production specification NPN Silicon Epitaxial Planar Transistor 2SC4215ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC=1