Weitron 2SC4215
NPN Silicon Transistor
FEATURES
: * Power dissipation 1. BASE 2. EMITTER 3. COLLECTOR 2 SOT-323(SC-70) SOT-323 Outline Demensions A Unit:mm SOT-323 B C TOP VIEW D E G H K L J M Dim A B C D E G H J K L M Min 0.30 1.15 2.00 0.30 1.20 1.80 0.00 0.80 0.42 0.10 Max 0.40 1.35 2.40 0.65 0.40 1.40 2.20 0.10 1.00 0.53 0.25 WEITRON 1/4 20-Jan-2011 Free Datasheet 2SC4215MAXIMUM RATINGS
( TA=25°C unless otherwise noted) Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature WEITRON Symbol VCBO VCEO VEBO IC PD TJ Tstg Value 40 30 4 20 100 150 -55 to +150 Unit V V V mA mW °C °CELECTRICAL CHARACTERISTICS
(Ta=25ºC unless otherwise specified) Parameter Collector-base breakdown voltage I C = 100µA, I E =0 Symbol V (BR)CBO V (BR)CEO V (BR)EBO I CBO I EBO hFE fT Cre C C● rbb NF Gpe Min 40 30 4 40 260 17 Typ 550 0.55 2 23 Max 0.1 0.5 200 25 5 - Unit V V V µA µA MHz pF pS dB dB Collector-emitter breakdown vol...