Inchange Semiconductor 2SC4215
Silicon NPN Transistor
DESCRIPTION
●Low Noise NF = 2 dB TYP., @ f = 100MHz●Small Feedback Capacitance Cre = 0.55pF TYP.
APPLICATIONS
●High frequency amplifier applications●FM, RF ,MIX, IF amplifier applications
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 4V IC Collector Current-Continuous 20 mA IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 4 mA 0.1 W 125 ℃ Tstg Storage Temperature Range -55~125 ℃ isc website: 1 INCHANGE Semiconductor isc Silicon NPN RF Transistor isc RF Product Specification 2SC4215ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS ICBO Collector Cutoff Current VCB= 40V; IE= 0 IEBO Emitter Cutoff Current hFE DC Current Gain VEB= 4V; IC= 0 IC= 1mA ; VCE= 6V fT Current-Gain—Bandwidth Product IC= 1mA ; VCE= 6V Cre Feed-Back Capacitance rbb’● CC Base Time Constant Gpe Power Gain NF Noise Figure VCB= 10V;f= 1.0MHz IE= -1mA ; VCB= 6V; f= 30MHz IE= -1mA ; VCC= 6V;f= 100MHz IE= -1mA ; VCC= 6V;f= 100MHz MIN TYP.