Galaxy Century Microelectronics 2SC4548
NPN Epitaxial Planar Silicon Transistor
| Part No. | 2SC4548 |
|---|---|
| Datasheet | 2SC4548 Download |
| Manufacturer | Galaxy Century Microelectronics |
| Description | NPN Epitaxial Planar Silicon Transistor |
| Buy | Stock & Price |
FEATURES
● High breakdown voltage● Adoption of MBIT process
● Excellent hFE linearlity
● RoHS compliant with Halogen-free Product Specification 2SC4548 ORDERING INFORMATION Type No. Marking 2SC4548-D CN 2SC4548-E CN SOT-89 Package Code SOT-89 SOT-89 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage 400 VCEO Collector-Emitter Voltage 400 VEBO Emitter-Base Voltage 5 IC Collector Current 200 ICP Collector Current(Pulse) PC Collector Dissipation TJ, TSTG Junction and Storage Temperature Note 1: Mounted on ceramic substrate (250mm2 * 0.8mm) 400 0.5 1.3 Note1 -55 to +150 Units V V V mA mA W °C STM0662A: April 2018 1 Product Specification NPN Epitaxial Planar Silicon Transistor 2SC4548
ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=10uA,IE=0 400 V Collector- emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 400 V Emitter- base breakdo...
