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2SD1913 - Power Transistor

Key Features

  • z Wide ASO (Adoption of MBIT process). z Low saturation voltage. z High reliability. z High breakdown voltage. z Micaless package facilitating mounting Pb Lead-free Production specification 2SD1913 TO-220AB.

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Power Transistor(60V,3A ) FEATURES z Wide ASO (Adoption of MBIT process). z Low saturation voltage. z High reliability. z High breakdown voltage. z Micaless package facilitating mounting Pb Lead-free Production specification 2SD1913 TO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO VEBO IC PC Tj,Tstg Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Junction and Storage Temperature 60 V 6V 3A 2W -55 to +150 ℃ X097 Rev.A www.gmicroelec.com 1 Production specification Power Transistor(60V,3A ) 2SD1913 ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified.