• Part: 2SD1913
  • Description: Power Transistor
  • Manufacturer: Galaxy Microelectronics
  • Size: 194.03 KB
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Datasheet Summary

Power Transistor(60V,3A ) Features z Wide ASO (Adoption of MBIT process). z Low saturation voltage. z High reliability. z High breakdown voltage. z Micaless package facilitating mounting Pb Lead-free Production specification TO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO VEBO IC PC Tj,Tstg Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Junction and Storage Temperature 60 V 6V 3A 2W -55 to +150 ℃ X097 Rev.A .gmicroelec. 1 Production specification Power Transistor(60V,3A ) ELECTRICAL CHARACTERISTICS Ratings...