2SD1913 - PNP/NPN Epitaxial Planar Silicon Transistors

Datasheet Summary

Features

10.0 3.2 Wide ASO (Adoption of MBIT process). Low saturation voltage. High reliability. High breakdown voltage. Micaless package facilitating mounting. 5.6 14.0 1.6 1.2 0.75 1 2 3 2.55 2.4 2.4 0.7 Specifications ( ):2SB1274 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage.

Sanyo Semicon Device

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Datasheet Details

Part number	2SD1913
Manufacturer	Sanyo Semicon Device
File Size	34.38 KB
Description	PNP/NPN Epitaxial Planar Silicon Transistors
Datasheet	2SD1913 Datasheet
Additional preview pages of the 2SD1913 datasheet.

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Full PDF Text Transcription

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Ordering number : ENN2246B 2SB1274/2SD1913 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1274/2SD1913 60V/3A Low-Frequency Power Amplifier Applications Applications • Package Dimensions unit : mm 2041A [2SB1274/2SD1913] 4.5 2.8 3.5 7.2 16.0 18.1 General power amplifier. Features • • • • • 10.0 3.2 Wide ASO (Adoption of MBIT process). Low saturation voltage. High reliability. High breakdown voltage. Micaless package facilitating mounting. 5.6 14.0 1.6 1.2 0.75 1 2 3 2.55 2.4 2.4 0.

Published: Apr 3, 2005 |